Testicular Toxicity of Gallium Arsenide, Indium Arsenide, and Arsenic Oxide in Rats by Repetitive Intratracheal Instillation
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چکیده
منابع مشابه
The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide „001..
The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...
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Gallium arsenide (GaAs) has superior properties for making high-frequency devices and photon emitters. In the future, this is going to be ex tensively used in the development of super comput ers, telecommunication systems, light-emitting diodes, and semiconductor lasers. This will inevita bly lead to an increase in the exposure of workers manufacturing these products to GaAs. When GaAs was inst...
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Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...
متن کاملSpin injection in indium arsenide
In a two dimensional electron system (2DES), coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET). T...
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ژورنال
عنوان ژورنال: Toxicological Sciences
سال: 1996
ISSN: 1096-6080,1096-0929
DOI: 10.1093/toxsci/32.1.72